Cor Claeys, Cor Claeys, Geert Hellings, Geert Hellings, Hiroaki Arimura, Hiroaki Arimura,
Bertrand Parvais,
Bertrand Parvais, Lars Ake Ragnarsson, Lars Ake Ragnarsson, Harold Dekkers, Harold Dekkers, Tom Schram, Tom Schram, Dimitri Linten, Dimitri Linten, Naoto Horiguchi, Naoto Horiguchi, Eddy Simoen, Eddy Simoen, Dimitri Boudier, Dimitri Boudier, Bogdan Cretu, Bogdan Cretu
The low-frequency noise of input-output (I/O) FinFETs with 3.5 nm and 5nm SiO2 gate dielectric is studied for different processing conditions. For the thin dielectric a high-pressure (HP) deuterium anneal can improve the noise Power Spectral Density (PSD). There is no significant impact on n-channel devices, while a pronounced effect is observed for p-channel devices, especially for a HP anneal at 400 °C and 20 atm. Results are also presented on the use of a Si/SiGe superlattice architecture and it is shown that the same gate stack quality as for standard devices can be maintained.
Claeys, C, Hellings, G, Arimura, H, Parvais, B, Ragnarsson, LA, Dekkers, H, Schram, T, Linten, D, Horiguchi, N, Simoen, E, Boudier, D & Cretu, B 2020, Technology Impact on the Low Frequency Noise of Si and Si/SiGe Superlattice Input-Output FinFETs. in S Yu, X Zhu & T-A Tang (eds), 2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 - Proceedings., 9278221, 2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 15th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020, Virtual, Kunming, China, 3/11/20. https://doi.org/10.1109/ICSICT49897.2020.9278221
Claeys, C., Hellings, G., Arimura, H., Parvais, B., Ragnarsson, L. A., Dekkers, H., Schram, T., Linten, D., Horiguchi, N., Simoen, E., Boudier, D., & Cretu, B. (2020). Technology Impact on the Low Frequency Noise of Si and Si/SiGe Superlattice Input-Output FinFETs. In S. Yu, X. Zhu, & T.-A. Tang (Eds.), 2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 - Proceedings Article 9278221 (2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICSICT49897.2020.9278221
@inproceedings{6035432a1713414896bae20bbed24481,
title = "Technology Impact on the Low Frequency Noise of Si and Si/SiGe Superlattice Input-Output FinFETs",
abstract = "The low-frequency noise of input-output (I/O) FinFETs with 3.5 nm and 5nm SiO2 gate dielectric is studied for different processing conditions. For the thin dielectric a high-pressure (HP) deuterium anneal can improve the noise Power Spectral Density (PSD). There is no significant impact on n-channel devices, while a pronounced effect is observed for p-channel devices, especially for a HP anneal at 400 °C and 20 atm. Results are also presented on the use of a Si/SiGe superlattice architecture and it is shown that the same gate stack quality as for standard devices can be maintained.",
author = "Cor Claeys and Geert Hellings and Hiroaki Arimura and Bertrand Parvais and Ragnarsson, \{Lars Ake\} and Harold Dekkers and Tom Schram and Dimitri Linten and Naoto Horiguchi and Eddy Simoen and Dimitri Boudier and Bogdan Cretu",
year = "2020",
month = nov,
day = "3",
doi = "10.1109/ICSICT49897.2020.9278221",
language = "English",
series = "2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
editor = "Shaofeng Yu and Xiaona Zhu and Ting-Ao Tang",
booktitle = "2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 - Proceedings",
address = "United States",
note = "15th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 ; Conference date: 03-11-2020 Through 06-11-2020",
}