Sharan, N., Eneman, G., Collaert, N., Parvais, B., Spessot, A., Mocuta, A., Shaik, K. A., Jang, D., Schuddinck, P., Yakimets, D., Bardon, M. G., Mitard, J., Arimura, H., & Bufler, F. M. (2019). Ge Devices: A Potential Candidate for Sub-5-nm Nodes? IEEE Transactions on Electron Devices, 66(11), 4997-5002. Article 8868097. https://doi.org/10.1109/TED.2019.2944336

@article{3246e329ad1245ce9aa6cc6faf90ee91,
title = "Ge Devices: A Potential Candidate for Sub-5-nm Nodes?",
abstract = "In this article, we explore different device and standard cell architectures for scaling the Germanium fin field-effect transistor (FinFET) and nanosheet (NS) at the sub-5-nm node. It is demonstrated that the Germanium device provides approximately 70\% improvement in drive current and 3.4 × less device resistance. The main concern for Germanium devices remains the high leakage current due to the gate-induced drain leakage, which limits their usage to high-speed applications. Overall, Germanium devices require fewer boosters than silicon to scale beyond the 5-nm node. Contact resistivity is found to be a critical knob for Germanium and it can be relaxed to 3e-9 Ω-cm 2 to meet the power and performance targets for the sub-5-nm node. Moving to the NS helps in relaxing this constraint further. ",
author = "Neha Sharan and Geert Eneman and Nadine Collaert and Bertrand Parvais and Alessio Spessot and Anda Mocuta and Shaik, \{Khaja A.\} and Doyoung Jang and Pieter Schuddinck and Dmitry Yakimets and Bardon, \{Marie Garcia\} and Jerome Mitard and Hiroaki Arimura and Bufler, \{Fabian M.\}",
year = "2019",
month = nov,
doi = "10.1109/TED.2019.2944336",
language = "English",
volume = "66",
pages = "4997--5002",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "11",
}