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A. Vandooren, A. Vandooren, L. Witters, L. Witters, J. Franco, J. Franco, A. Mallik, A. Mallik, Bertrand Parvais, Bertrand Parvais, Z. Wu, Z. Wu, A. Walke, A. Walke, V. Deshpande, V. Deshpande, E. Rosseel, E. Rosseel, A. Hikavyy, A. Hikavyy, W. Li, W. Li, L. Peng, L. Peng, N. Rassoul, N. Rassoul, G. Jamieson, G. Jamieson, F. Inoue, F. Inoue, G. Verbinnen, G. Verbinnen, K. Devriendt, K. Devriendt, L. Teugels, L. Teugels, N. Heylen, N. Heylen, E. Vecchio, E. Vecchio, T. Zheng, T. Zheng, N. Waldron, N. Waldron, V. De Heyn, V. De Heyn, D. Mocuta, D. Mocuta, Nadine Collaert, Nadine Collaert
 

Chapter in Book/ Report/ Conference proceeding

Abstract ■

In this paper, we review the current progress on 3D sequential device stacking, highlighting the main integration challenges and the possible technological solutions. Next, we explore the potential benefits of 3D sequential stacking at transistor level, CMOS level and for hybrid circuits.

Reference ■