Publication Details
Overview
 
 
P. Weckx, P. Weckx, M. Simicic, M. Simicic, K. Nomoto, K. Nomoto, M. Ono, M. Ono, Bertrand Parvais, Bertrand Parvais, B. Kaczer, B. Kaczer, P. Raghavan, P. Raghavan, D. Linten, D. Linten, K. Sawada, K. Sawada, H. Ammo, H. Ammo, S. Yamakawa, S. Yamakawa, A. Spessot, A. Spessot, D. Verkest, D. Verkest, Anda Mocuta, Anda Mocuta
 

Chapter in Book/ Report/ Conference proceeding

Abstract ■

{\textcopyright} 2017 IEEE. This paper describes a defect-centric based compact modeling methodology for time-dependent threshold voltage variability (V TH ), induced by Bias Temperature Instability (BTI) and Random Telegraph Noise (RTN). A Verilog-A based model wrapper is used to implement a threshold voltage shift by adding a variable voltage source at the gate of the core device model. This compact model allows to incorporate all BTI and RTN related electrostatics and kinetics in standard EDA-Tools as a 'black box' without any custom simulation flow. It can therefore be used in either a manual configuration for academic purposes or be integrated as is into industry standard EDA tools and simulation flows.

Reference ■
 
Weckx, P, Simicic, M, Nomoto, K, Ono, M, Parvais, B, Kaczer, B, Raghavan, P, Linten, D, Sawada, K, Ammo, H, Yamakawa, S, Spessot, A, Verkest, D & Mocuta, A 2017, Defect-based compact modeling for RTN and BTI variability. in IEEE International Reliability Physics Symposium Proceedings. IEEE International Reliability Physics Symposium Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. CR7.1-CR7.6, International reliability symposium, 29/05/17. https://doi.org/10.1109/IRPS.2017.7936356
Weckx, P., Simicic, M., Nomoto, K., Ono, M., Parvais, B., Kaczer, B., Raghavan, P., Linten, D., Sawada, K., Ammo, H., Yamakawa, S., Spessot, A., Verkest, D., & Mocuta, A. (2017). Defect-based compact modeling for RTN and BTI variability. In IEEE International Reliability Physics Symposium Proceedings (pp. CR7.1-CR7.6). (IEEE International Reliability Physics Symposium Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRPS.2017.7936356
@inproceedings{9fe98171b87d4ae693e9222d75862306,
title = "Defect-based compact modeling for RTN and BTI variability",
abstract = "{\textcopyright} 2017 IEEE. This paper describes a defect-centric based compact modeling methodology for time-dependent threshold voltage variability (V TH ), induced by Bias Temperature Instability (BTI) and Random Telegraph Noise (RTN). A Verilog-A based model wrapper is used to implement a threshold voltage shift by adding a variable voltage source at the gate of the core device model. This compact model allows to incorporate all BTI and RTN related electrostatics and kinetics in standard EDA-Tools as a 'black box' without any custom simulation flow. It can therefore be used in either a manual configuration for academic purposes or be integrated as is into industry standard EDA tools and simulation flows.",
keywords = "BTI, RTN, compact modeling, defects, eMSM, time dependent variability",
author = "P. Weckx and M. Simicic and K. Nomoto and M. Ono and B. Parvais and B. Kaczer and P. Raghavan and D. Linten and K. Sawada and H. Ammo and S. Yamakawa and A. Spessot and D. Verkest and Anda Mocuta",
year = "2017",
month = may,
day = "30",
doi = "10.1109/IRPS.2017.7936356",
language = "English",
isbn = "9781509066407",
series = "IEEE International Reliability Physics Symposium Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "CR7.1--CR7.6",
booktitle = "IEEE International Reliability Physics Symposium Proceedings",
address = "United States",
note = "International reliability symposium, IRPS ; Conference date: 29-05-2017 Through 02-06-2017",
}