In the study of the blue-violet emission properties of SiCN thin films, the emission intensity depends on the crystal structure of thin films. The annealing process is widely used in the preparation process of thin films as one of the effective means to remove defects and improve crystal quality. In this study, SiCN thin films were prepared by RF magnetron sputtering method utilizing sintered silicon nitride and graphite targets on Si/SiO2 substrates. Then, the samples were separately annealed from 600 to 1000? with an argon ambient for 30 min to optimize the photoluminescence performance of the blue-violet emission. The characterization results of XRD spectra show that the crystallinity of the SiCN sample with 900 °C annealing temperature is the best. The chemical bonds, and the surface morphology of the samples changed greatly after annealing. The RMS roughness of the SiCN samples increased from 1.9 nm to 20.19 nm before and after annealing at 900 °C. Also, the results of PL spectra show that the intensity of blue-violet emission at 365 nm reinforced 28.6 times after annealing at 1000 °C. It makes the SiCN film be a candidate of phosphor for blue-violet LEDs.
Cheng, C & Stiens, J 2021, ' Blue-violet emission of silicon carbonitride thin films prepared by sputtering and annealing treatment ', Applied Surface Science , vol. 546, no. 2021, 149121, pp. 149121-149127.
Cheng, C. , & Stiens, J. (2021). Blue-violet emission of silicon carbonitride thin films prepared by sputtering and annealing treatment . Applied Surface Science , 546 (2021), 149121-149127. [149121].
@article{549c25ff81404a608d9cf916980a7987,
title = " Blue-violet emission of silicon carbonitride thin films prepared by sputtering and annealing treatment " ,
abstract = " In the study of the blue-violet emission properties of SiCN thin films, the emission intensity depends on the crystal structure of thin films. The annealing process is widely used in the preparation process of thin films as one of the effective means to remove defects and improve crystal quality. In this study, SiCN thin films were prepared by RF magnetron sputtering method utilizing sintered silicon nitride and graphite targets on Si/SiO2 substrates. Then, the samples were separately annealed from 600 to 1000? with an argon ambient for 30 min to optimize the photoluminescence performance of the blue-violet emission. The characterization results of XRD spectra show that the crystallinity of the SiCN sample with 900 °C annealing temperature is the best. The chemical bonds, and the surface morphology of the samples changed greatly after annealing. The RMS roughness of the SiCN samples increased from 1.9 nm to 20.19 nm before and after annealing at 900 °C. Also, the results of PL spectra show that the intensity of blue-violet emission at 365 nm reinforced 28.6 times after annealing at 1000 °C. It makes the SiCN film be a candidate of phosphor for blue-violet LEDs. " ,
keywords = " SiCN film Annealing Microstructure Photoluminescence Sputtering Optoelectronics " ,
author = " Chen Cheng and Johan Stiens " ,
note = " Funding Information: This work was supported by the Foundations of the Education Department of Shaanxi Province (18JK0780), the National Key Research and Development Program of China (2019YFC1520904), the Key Program for International Science and Technology Cooperation Projects of Shaanxi Province (2018KWZ-08), National Natural Science Foundation of China (61804125 and 61701402) and the start-up funds from Northwestern Polytechnical University (Grant 19SH020159 and 19SH020123). The authors of Vrije Universiteit Brussel (VUB) through the SRP-project M3D2 and the ETRO-IOF project. Publisher Copyright: { extcopyright} 2021 Elsevier B.V. Copyright: Copyright 2021 Elsevier B.V., All rights reserved. " ,
year = " 2021 " ,
month = apr,
day = " 30 " ,
doi = " 10.1016/j.apsusc.2021.149121 " ,
language = " English " ,
volume = " 546 " ,
pages = " 149121149127 " ,
journal = " Applied Surface Science " ,
issn = " 0169-4332 " ,
publisher = " Elsevier " ,
number = " 2021 " ,
}