Publication Details
Overview
 
 
Linkun Wu, Linkun Wu, David San Segundo Bello, David San Segundo Bello, Philippe Coppejans, Philippe Coppejans, Andreas Süss, Andreas Süss, Maarten Rosmeulen, Maarten Rosmeulen, Jan Craninckx, Jan Craninckx, Piet Wambacq, Piet Wambacq, Jonathan Borremans, Jonathan Borremans
 

Chapter in Book/ Report/ Conference proceeding

Abstract ■

This work presents in-pixel circuit techniques for burst-mode ultra-high-speed imagers to improve the noise performance while maintaining a dense analog memory storage for each pixel. Together with an AC coupling CDS stage, in-pixel amplification is demonstrated to be useful to improve effective frame depth for longer recording time. Considering the benefits on scaling and power consumption, a 108-cell memory bank (10fF/cell) is implemented inside the pixel. Two types of pixel variations were fabricated in CMOS 130nm technology. The photon transfer curves of both pixel types are measured over different operation speeds up to 20Mfps showing noise performance of both variations to be less than 10e- noise.

Reference ■