—Millimeter-wave sensors perform robust and accurate remote motion sensing. We propose a 28 nm CMOS Radar TX that modulates a 79 GHz carrier with a 2 Gsps Pseudo-Noise sequence. The measured modulated output power at 79 GHz in 4 GHz BW is higher than 11 dBm (27 C), while the spurious emissions are below 20 dBc, fully satisfying the spectral mask regulations. The output RF BW where we can lock the injection-locked LO is 13 GHz. Overall, the TX draws 121 mW from a 0.9 V supply resulting in a record efficiency above 10\%. More importantly, the TX is functional up to 125 C still providing more than 7 dBm output power over the same RF BW.
Giannini, V, Guermandi, D, Shi, Q, Medra, A, Van Thillo, W, Bourdoux, A & Wambacq, P 2014, 'A 79 GHz Phase-Modulated 4 GHz-BW CW Radar Transmitter in 28 nm CMOS', IEEE JOURNAL OF SOLID-STATE CIRCUITS, vol. 49, no. 12, 14759554, pp. 2925-2937.
Giannini, V., Guermandi, D., Shi, Q., Medra, A., Van Thillo, W., Bourdoux, A., & Wambacq, P. (2014). A 79 GHz Phase-Modulated 4 GHz-BW CW Radar Transmitter in 28 nm CMOS. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 49(12), 2925-2937. Article 14759554.
@article{0817a318a82b43a7a28e508e3859bd9f,
title = "A 79 GHz Phase-Modulated 4 GHz-BW CW Radar Transmitter in 28 nm CMOS",
abstract = "—Millimeter-wave sensors perform robust and accurate remote motion sensing. We propose a 28 nm CMOS Radar TX that modulates a 79 GHz carrier with a 2 Gsps Pseudo-Noise sequence. The measured modulated output power at 79 GHz in 4 GHz BW is higher than 11 dBm (27 C), while the spurious emissions are below 20 dBc, fully satisfying the spectral mask regulations. The output RF BW where we can lock the injection-locked LO is 13 GHz. Overall, the TX draws 121 mW from a 0.9 V supply resulting in a record efficiency above 10\%. More importantly, the TX is functional up to 125 C still providing more than 7 dBm output power over the same RF BW.",
author = "Vito Giannini and Davide Guermandi and Qixian Shi and Alaaeldien Medra and \{Van Thillo\}, Wim and Andre Bourdoux and Piet Wambacq",
year = "2014",
language = "English",
volume = "49",
pages = "2925--2937",
journal = "IEEE JOURNAL OF SOLID-STATE CIRCUITS",
issn = "0018-9200",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "12",
}