Cardinael, P., Yadav, S., Hahn, H., Banerjee, S., Kazemi Esfeh, B., Mauder, C., O'Sullivan, B., Peralagu, U., Vohra, A., Langer, R., Collaert, N., Parvais, B., & Raskin, J.-P. (2024). AlN/Si interface engineering to mitigate RF losses in MOCVD-grown GaN-on-Si substrates. Applied Physics Letters, 125(7), Article 072103 (2024). https://doi.org/10.1063/5.0212145

@article{cea610c0dd434290924d3c8049897ee1,
title = "AlN/Si interface engineering to mitigate RF losses in MOCVD-grown GaN-on-Si substrates",
author = "Pieter Cardinael and Sachin Yadav and Herwig Hahn and Sourish Banerjee and \{Kazemi Esfeh\}, Babak and Christof Mauder and Barry O'Sullivan and Uthayasankaran Peralagu and Anurag Vohra and Robert Langer and Nadine Collaert and Bertrand Parvais and Jean-Pierre Raskin",
year = "2024",
month = aug,
day = "15",
doi = "10.1063/5.0212145",
language = "English",
volume = "125",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "7",
}