We apply ramp-drain-voltage-(. Vd) -stress (RVS) method to characterize breakdown loci of GaN-on-Si HEMTs under high-power on state conditions. We observe that GaN-onSi HEMTs have distinct breakdown dependencies in the fully-ON state (when conductive current ≥400mA/mm) and semi-ON state (when conductive current <400mA/mm). In the fully-ON state, the breakdown loci are independent of HEMT top barrier options (InAIN, AIGaN, or AIN) while in the semi-ON state, the breakdown loci have clear top barrier dependences. We systematically screen key parameters behind the fully-ON breakdown voltages loci. We report significant dependences of fully-ON breakdown on device width, gate-to-drain spacing Lgd and RVS sweep rate. The dependence of fully-ON breakdown on device width results from self-heating effects. The dependence of fully-ON breakdown on Lgd and RVS sweep rate suggests correlation between device failure and dynamic trapping effects in the gate-to-drain access region.
Yu, H, Gupta, A, Kuo, Y-C, Chong, Y, Wu, T-L, Yadav, S, ElKashlan, R, Banerjee, S, Hahn, H, Mauder, C, Rathi, A, Wu, W-M, Esfeh, BK, Bury, E, Vermeersch, B, O'Sullivan, B, Alian, A, Asad, M, Peralagu, U, Parvais, B & Collaert, N 2026, Dynamic ON-State Breakdown of GaN-on-Si HEMT. in 2026 IEEE International Reliability Physics Symposium, IRPS 2026. 2026 edn, IEEE International Reliability Physics Symposium proceedings , IEEE, Tucson, USA, pp. 1-8. https://doi.org/10.1109/IRPS61424.2026.11499284
Yu, H., Gupta, A., Kuo, Y.-C., Chong, Y., Wu, T.-L., Yadav, S., ElKashlan, R., Banerjee, S., Hahn, H., Mauder, C., Rathi, A., Wu, W.-M., Esfeh, B. K., Bury, E., Vermeersch, B., O'Sullivan, B., Alian, A., Asad, M., Peralagu, U., ... Collaert, N. (2026). Dynamic ON-State Breakdown of GaN-on-Si HEMT. In 2026 IEEE International Reliability Physics Symposium, IRPS 2026 (2026 ed., pp. 1-8). (IEEE International Reliability Physics Symposium proceedings ). IEEE. https://doi.org/10.1109/IRPS61424.2026.11499284
@inproceedings{e099369fc7054df1a698ca91a4b245d1,
title = "Dynamic ON-State Breakdown of GaN-on-Si HEMT",
abstract = "We apply ramp-drain-voltage-(. Vd) -stress (RVS) method to characterize breakdown loci of GaN-on-Si HEMTs under high-power on state conditions. We observe that GaN-onSi HEMTs have distinct breakdown dependencies in the fully-ON state (when conductive current ≥400mA/mm) and semi-ON state (when conductive current <400mA/mm). In the fully-ON state, the breakdown loci are independent of HEMT top barrier options (InAIN, AIGaN, or AIN) while in the semi-ON state, the breakdown loci have clear top barrier dependences. We systematically screen key parameters behind the fully-ON breakdown voltages loci. We report significant dependences of fully-ON breakdown on device width, gate-to-drain spacing Lgd and RVS sweep rate. The dependence of fully-ON breakdown on device width results from self-heating effects. The dependence of fully-ON breakdown on Lgd and RVS sweep rate suggests correlation between device failure and dynamic trapping effects in the gate-to-drain access region.",
keywords = "High Power Breakdown, GaN HEMT Reliability, Thermal resistance, Self-Heating, Trapping, ON-state Breakdown",
author = "Hao Yu and Amratansh Gupta and Ying-Chun Kuo and Yiliang Chong and Tian-Li Wu and Sachin Yadav and Rana ElKashlan and Sourish Banerjee and Herwig Hahn and Christof Mauder and Aarti Rathi and Wei-Min Wu and Esfeh, \{Babak Kazemi\} and Erik Bury and Bjorn Vermeersch and Barry O'Sullivan and AliReza Alian and Muhammad Asad and Uthayasankaran Peralagu and Bertrand Parvais and Nadine Collaert",
note = "Publisher Copyright: {\textcopyright} 2026 IEEE.",
year = "2026",
month = mar,
day = "22",
doi = "10.1109/IRPS61424.2026.11499284",
language = "English",
isbn = "979-8-3315-8972-1",
series = "IEEE International Reliability Physics Symposium proceedings ",
publisher = "IEEE",
pages = "1--8",
booktitle = "2026 IEEE International Reliability Physics Symposium, IRPS 2026",
edition = "2026",
}