Kuo, Y. C., Yu, H., Braga, N. D. A., Fang, J., Gupta, A., Yadav, S., Sibaja-Hernandez, A., Alian, A. R., Peralagu, U., Collaert, N., & Parvais, B. (2026). Semi-On State Hole Generation in GaN HEMTs: Experimental Evidence and TCAD Modeling. IEEE Electron Device Letters, 47(9), 1728-1731. https://doi.org/10.1109/LED.2026.3711655

@article{aeff0487a18742249fdb79b1401061f6,
title = "Semi-On State Hole Generation in GaN HEMTs: Experimental Evidence and TCAD Modeling",
abstract = "We explore the physical mechanisms responsible for hole generation in GaN HEMTs in the semi-on state by experimentally investigating dependence of gate-collected hole current on VDS, VGS and temperature. Three key observations contradict conventional impact ionization: the hole current (1) saturates at high electric fields, (2) exhibits a positive temperature dependence, and (3) has a low trigger voltage of VDS = 27V at 5 K, which is significantly below the GaN bandgap energy. We therefore propose trap-assisted hole generation as the underlying mechanism and implement a corresponding behavioral model in TCAD. TCAD simulations accurately reproduce the observed dependencies of hole generation on VDS, GDS and temperature.",
keywords = "AlGaN/GaN HEMT, hole current, hot carrier effect, RF GaN, semi-on state, TCAD, trap-assisted hole generation",
author = "Kuo, \{Ying Chun\} and Hao Yu and Braga, \{Nelson De Almeida\} and Jingtian Fang and Amratansh Gupta and Sachin Yadav and Arturo Sibaja-Hernandez and Alian, \{Ali Reza\} and Uthayasankaran Peralagu and Nadine Collaert and Bertrand Parvais",
note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",
year = "2026",
month = jul,
day = "27",
doi = "10.1109/LED.2026.3711655",
language = "English",
volume = "47",
pages = "1728--1731",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "IEEE",
number = "9",
}