A scalable multi-VT enabled RMG CMOS integration process with highly conformal ALD TiN/TiAl/TiN is described. The multi-VT is implemented by metal gate tuning using two different options. The first relies on bottom-barrier thickness control, the second on implantation of nitrogen into the work function metal. A shift in the effective work function (eWF) of ∼400 mV is realized by adjusting the TiN bottom barrier thickness underneath TiAl, while over 200 mV shifts are achieved by means of implantation of nitrogen into ALD TiN/TiAl/TiN. The gate-stack Tinv, JG, DIT and reliability as well as the device performance are shown to be unaffected by the multi VT process.
Ragnarsson, L, Chew, SA, Dekkers, H, Luque, MT, Parvais, B, De Keersgieter, A, Devriendt, K, Van Ammel, A, Schram, T, Yoshida, N, Phatak, A, Han, K, Colombeau, B, Brand, A, Horiguchi, N & Thean, AVY 2014, Highly scalable bulk FinFET Devices with Multi-VT options by conductive metal gate stack tuning for the 10-nm node and beyond. in Digest of Technical Papers - Symposium on VLSI Technology., 6894359, Digest of Technical Papers - Symposium on VLSI Technology, Institute of Electrical and Electronics Engineers Inc., 34th Symposium on VLSI Technology, VLSIT 2014, Honolulu, United States, 9/06/14. https://doi.org/10.1109/VLSIT.2014.6894359
Ragnarsson, L., Chew, S. A., Dekkers, H., Luque, M. T., Parvais, B., De Keersgieter, A., Devriendt, K., Van Ammel, A., Schram, T., Yoshida, N., Phatak, A., Han, K., Colombeau, B., Brand, A., Horiguchi, N., & Thean, A. V. Y. (2014). Highly scalable bulk FinFET Devices with Multi-VT options by conductive metal gate stack tuning for the 10-nm node and beyond. In Digest of Technical Papers - Symposium on VLSI Technology Article 6894359 (Digest of Technical Papers - Symposium on VLSI Technology). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSIT.2014.6894359
@inproceedings{c1894f3adecd4cb5867fa6b58f5f2459,
title = "Highly scalable bulk FinFET Devices with Multi-VT options by conductive metal gate stack tuning for the 10-nm node and beyond",
abstract = "A scalable multi-VT enabled RMG CMOS integration process with highly conformal ALD TiN/TiAl/TiN is described. The multi-VT is implemented by metal gate tuning using two different options. The first relies on bottom-barrier thickness control, the second on implantation of nitrogen into the work function metal. A shift in the effective work function (eWF) of ∼400 mV is realized by adjusting the TiN bottom barrier thickness underneath TiAl, while over 200 mV shifts are achieved by means of implantation of nitrogen into ALD TiN/TiAl/TiN. The gate-stack Tinv, JG, DIT and reliability as well as the device performance are shown to be unaffected by the multi VT process.",
author = "L. Ragnarsson and Chew, {S. A.} and H. Dekkers and Luque, {M. Toledano} and B. Parvais and {De Keersgieter}, A. and K. Devriendt and {Van Ammel}, A. and T. Schram and N. Yoshida and A. Phatak and K. Han and B. Colombeau and A. Brand and N. Horiguchi and Thean, {A. V.Y.}",
year = "2014",
month = sep,
day = "8",
doi = "10.1109/VLSIT.2014.6894359",
language = "English",
series = "Digest of Technical Papers - Symposium on VLSI Technology",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "Digest of Technical Papers - Symposium on VLSI Technology",
address = "United States",
note = "34th Symposium on VLSI Technology, VLSIT 2014 ; Conference date: 09-06-2014 Through 12-06-2014",
}