Suitability of FinFET technology for low-power mixed-signal applications
 
Suitability of FinFET technology for low-power mixed-signal applications 
 
Bertrand Parvais, C. Gustin, V. De Heyn, J. Loo, M. Dehan, V. Subramanian, A. Mercha, Nadine Collaert, R. Rooyackers, M. Jurczak, Piet Wambacq, S. Decoutere
 
Abstract 

Wireless applications require a low power technology that enables digital/analog/RF functions on the same chip. FinFET technology presents a competitive alternative to planar CMOS as it features good digital, analog and low-frequency noise performances. Also, very good matching performance is presented here for the first time. Moreover, FinFETs are shown to be attractive for low-power applications below 10 GHz. The suitability of Fin varactors is evaluated and tradeoffs are given. An inductorless oscillator with large tuning range (1-8.5 GHz) for low-power wideband applications is demonstrated for the first time.