Very high external efficiencies have been reported from surface-textured thin-film light-emitting diodes. We have developed a novel process for the wafer-scale fabrication of surface-textured thin-film LEDs, avoiding the use of wet thermal oxidation and epitaxial lift-off. The LEDs consist of a double-mesa structure with a structured gold reflector serving simultaneously as a p-contact. The light emission occurs on the side of the original GaAs substrate, which is removed by selective etching after glueing the sample with the processed side onto a carrier substrate