Fully-depleted SOI CMOS technology for heterogeneous micropower, high-temperature or RF microsystems

Fully-depleted SOI CMOS technology for heterogeneous micropower, high-temperature or RF microsystems ■

J. P. Raskin, J. Laconte, A. Akheyar, C. Dupont, S. Adriaensen, A. Nève, M. Dehan, Bertrand Parvais, D. Vanhoenacker, L. Demeûs, P. Delatte, V. Dessard, D. Flandre

Abstract ■

Based on an extensive review of research results on the material, process, device and circuit properties of thin-film fully-depleted (FD) SOI CMOS, our work demonstrates that such a process with channel lengths of about 1 μm may emerge as one of the most promising and mature contender for integrated microsystems which must operate under low-voltage low-power conditions, at microwave frequencies and/or in the temperature range 200-350°C. Moreover, CMOS-compatible microfabrication processes have been developed in order to build low cost, low power, low voltage MEMS for various applications in RF communications, biomedical engineering, domotic, etc.