High-efficiency thin-film light-emitting diodes at 650 nm
 
High-efficiency thin-film light-emitting diodes at 650 nm ■
 
Cathleen Rooman, Reiner Windisch, M. De Hondt, P. Modak, I. Moerman, P. Mijlemans, Barun Dutta, Gustaaf Borghs, Roger Vounckx, Maarten Kuijk, P. Heremans
 
Abstract ■

The first surface-textured thin-film GaInP/AlGaInP light-emitting diodes operating at a wavelength of 650 nm are presented, Unencapsulated devices reach an external quantum efficiency of 24%, which is further increased to 31% by encapsulation. The optical output power is 4mW at a current of 7mA