Materials and Defect Aspects of III-V and III-N Devices for High-Speed Analog/RF Applications

Materials and Defect Aspects of III-V and III-N Devices for High-Speed Analog/RF Applications ■

Eddy Simoen, Po Chun Brent Hsu, Hao Yu, Hongyue Wang, Ming Zhao, Kenichiro Takakura, Vamsi Putcha, Uthayasankaran Peralagu, Bertrand Parvais, Niamh Waldron, Nadine Collaert

Abstract ■

This paper describes the application of Deep Level Transient Spectroscopy and Generation-Recombination Noise Spectroscopy to the study of trap levels in III-V and III-N materials and devices.