First demonstration of III-V HBTs on 300 mm Si substrates using nano-ridge engineering

First demonstration of III-V HBTs on 300 mm Si substrates using nano-ridge engineering ■

A. Vais, R. Alcotte, M. Ingels, Piet Wambacq, Bertrand Parvais, R. Langer, B. Kunert, N. Waldron, Nadine Collaert, L. Witters, Y. Mols, A. S. Hernandez, A. Walke, H. Yu, M. Baryshnikova, G. Mannaert, V. Deshpande

Abstract ■

In this paper, we demonstrate GaAs/InGaP HBTs grown on a 300 mm Si substrate. A DC current gain of ~112 and breakdown voltage, BVCBO, of 10 V is achieved. The emitter-base and base-collector diodes show an ideality factor of ~1.2 and ~1.4, respectively. This demonstration shows the potential for enabling a hybrid III-V CMOS/ technology for 5G and mm-wave applications, not limited to GaAs but which can also be extended to InGaAs on a 300 mm Si substrate.