A low-power 57-to-66GHz transceiver in 40nm LP CMOS with -17dB EVM at 7Gb/s

A low-power 57-to-66GHz transceiver in 40nm LP CMOS with -17dB EVM at 7Gb/s ■

Vojkan Vidojkovic, Vojkan Vidojkovic, Vojkan Vidojkovic, Giovanni Mangraviti, Giovanni Mangraviti, Giovanni Mangraviti, Khaled Khalaf, Khaled Khalaf, Khaled Khalaf, Viki Szortyka, Viki Szortyka, Viki Szortyka, Kristof Vaesen, Kristof Vaesen, Kristof Vaesen, Wim Van Thillo, Wim Van Thillo, Wim Van Thillo, Bertrand Parvais, Bertrand Parvais, Bertrand Parvais, Michael Libois, Michael Libois, Michael Libois, Steven Thijs, Steven Thijs, Steven Thijs, John Long, John Long, John Long, Charlotte Soens, Charlotte Soens, Charlotte Soens, Piet Wambacq, Piet Wambacq, Piet Wambacq

Abstract ■

A direct-conversion transceiver in 40nm digital LP CMOS for 57-66GHz wireless communication is described. In TX mode the IC consumes 185mW with 10.2dBm P1dB. In RX mode consumption is 130mW with a NF of 5.5dB and 30dB gain. The frequency generation uses a subharmonically injection-locked QVCO with 8GHz locking range over the 57-66GHz band. ESD robustness is more than 4kV HBM. The transceiver achieves -17dB EVM for QAM16 modulation in the 4 channels specified by IEEE 802.15.3c standard.