Device and circuit-level analog performance trade-offs: a comparative study of planar bulk FETs versus FinFETs
 
Device and circuit-level analog performance trade-offs: a comparative study of planar bulk FETs versus FinFETs 
 
V. Subramanian, Bertrand Parvais, Jonathan Borremans, A. Mercha, Dimitri Linten, Piet Wambacq, Josine Loo, M. Dehan, Nadine Collaert, S Kubicek, R. J. P. Lander, J.c. Hooker, F. N. Cubaynes, S. Donnay, M. Jurczak, G. Groeseneken, Willy Sansen, S. Decoutere
 
Abstract 

Comparison of digital and analog Figures-of-Merit of FinFETs and planar bulk MOSFETs reveals an interesting trade-off in analog/RF design space. It is seen that FinFETs possess key advantages over bulk FETs for applications around 5 GHz where the performance-power trade-off is important. In case of higher frequency applications bulk MOSFETs are shown to hold the advantage on account of their higher transconductance (Gm), provided a degraded voltage gain and a higher leakage current can be tolerated.