We present the epitaxial growth of InN on Ge(111) by using an intermediate GaN template. The growth was performed with Plasma Assisted MBE (PAMBE). InN-based devices are promising due to outstanding material properties such as a large electrical mobility, and high peak and saturation velocities. Recently we have for the first time reported the growth of epitaxial GaN on Ge(111) [2]. It was found that direct growth of GaN performs well on Ge(111). A streaky reflection high energy electron diffraction pattern was observed during growth. X-ray diffraction showed a rocking curve full width at half maximum of only 371 arc seconds for a 38 nm GaN layer and indicates an abrupt interface between the GaN and Ge. We looked into the possibility of using the GaN template for InN growth on Ge with PAMBE. In this presentation results on growth, structural and electrical analysis are discussed and compared to recent results of Trybus et al [1], who reported the growth of InN directly on Ge(111). References 1. E. Trybus, G. Namkoong, W. Henderson, W. A. Doolittle, R. Liu, J. Mei, F. Ponce, M. Cheung, F. Chen, M. Furis, A. Cartwright, J. Crystal Growth 279, 311 (2005) 2. R.R. Lieten, S. Degroote, K. Cheng, M. Leys, M. Kuijk, G. Borghs, Applied Physics Letters 89, 25, 2118 (2006)