Inductor-Based ESD Protection under CDM-like ESD Stress Conditions for RF Applications

Inductor-Based ESD Protection under CDM-like ESD Stress Conditions for RF Applications ■

S. Thijs, Jonathan Borremans, P. Jansen, Dimitri Linten, M. Scholz, Piet Wambacq, G. Groeseneken

Abstract ■

Charged device model (CDM) electrostatic discharge (ESD) stress is a major concern for inductor-based ESD protection strategies for RF circuits processed in advanced nano-CMOS technologies. The CDM robustness of such protection methodology is investigated in this paper based on very-fast transmission line pulse (VFTLP) measurements. Its applicability is discussed for future technologies and RF applications.