Perspectives on GaN MISHEMT Power Amplifier Versus Positive Gate Bias Instability

Perspectives on GaN MISHEMT Power Amplifier Versus Positive Gate Bias Instability ■

Hao Yu, Rana Yasser ElKashlan, Meng-Che Tsai, Yi Yang, Mamoun Guenach, Ying-Chun Kuo, Sachin Yadav, Barry O Sullivan, Aarti Rathi, Amratansh Gupta, Dongping Xiao, Claude Desset, Alireza Alian, Uthayasankaran Peralagu, Valeri Afanasiev, Tian-Li Wu, Bertrand Parvais, Nadine Collaert

Abstract ■

In this work, we discuss whether a positive gate bias instability (Δ V th) issue hampers a GaN MISHEMT in power amplifier (PA) applications. Two aspects are evaluated: (1) the safe gate modulation range of a GaN MISHEMT that is free of Δ V th, and (2) the gate modulation range of a PA in linear operation. The analysis shows that the two ranges have a significant overlap, meaning that a linearly operating MISHEMT PA can be well designed to avoid the positive Δ V th issue.