An Adaptable In(Ga)P/Ga(Sb)As/Ga(In)As HBT Technology on 300 mm Si for RF Applications

An Adaptable In(Ga)P/Ga(Sb)As/Ga(In)As HBT Technology on 300 mm Si for RF Applications ■

Annie Kumar, Annie Kumar, Annie Kumar, Sachin Yadav, Sachin Yadav, Sachin Yadav, Abhitosh Vais, Abhitosh Vais, Abhitosh Vais, Guillaume Boccardi, Guillaume Boccardi, Guillaume Boccardi, Yves Mols, Yves Mols, Yves Mols, Reynald Alcotte, Reynald Alcotte, Reynald Alcotte, Bertrand Parvais, Bertrand Parvais, Bertrand Parvais, Bernardette Kunert, Bernardette Kunert, Bernardette Kunert, Nadine Collaert, Nadine Collaert, Nadine Collaert

Abstract ■

We present a versatile III-V Heterojunction Bipolar Transistor (HBT) technology on 300 mm Si which can be adapted to RF applications ranging from microwave to mmWave bands. We demonstrate its potential by fabricating HBTs based on the InGaP/GaAsSb/InGaAs material system monolithically integrated on 300 mm Si substrate by varying the In and Sb content in the corresponding device layers while achieving a very low threading dislocation density (TDD) (< 5× 106cm-2). An HBT device stack, grown lattice-matched to fully relaxed Ino.3Ga0.3.7 3Ga0.7As nano-ridges on trench-patterned Si, shows> 50x improvement in the collector current density as compared to our InGaP/GaAs HBTs without impacting the interface quality of underlying hetero-interfaces as indicated by the ideality factors of the base (1.8) and collector (1) currents, respectively. ft and fmax of 36 GHz and 13.7 GHz, respectively, are reported for an emitter width of 5 μm.