Toward Fine-Grained Partitioning of Low-Level SRAM Caches for Emerging 3D-IC Designs
 
Toward Fine-Grained Partitioning of Low-Level SRAM Caches for Emerging 3D-IC Designs ■
 
Sudipta Das, Sudipta Das, Sudipta Das, Bhawana Kumari, Bhawana Kumari, Bhawana Kumari, Siva Satyendra Sahoo, Siva Satyendra Sahoo, Siva Satyendra Sahoo, Yukai Chen, Yukai Chen, Yukai Chen, James Myers, James Myers, James Myers, Dragomir Milojevic, Dragomir Milojevic, Dragomir Milojevic, Dwaipayan Biswas, Dwaipayan Biswas, Dwaipayan Biswas, Julien Ryckaert, Julien Ryckaert, Julien Ryckaert
 
Abstract ■

Scaling on-chip memory capacity is one of the primary approaches to mitigate memory wall bottlenecks. Various 2.5-D/3-D integration schemes, leveraging novel partitioning, are being actively explored to improve system performance. However, fine-grained functional partitioning of memory macros is not widely reported. As static RAM (SRAM) scaling stagnates with emerging CMOS logic roadmap, we propose a partitioning of low-level (faster access) caches in 3-D using an array under CMOS (AuC) technology paradigm. Our study focuses on partitioning and optimization of SRAM bit-cells and peripheral circuits, enabling heterogeneous integration, achieving up to 12\% higher operating frequency with 50\% leakage power reduction in the memory macros. Applied on a 64-bit mobile system-on-chip (SoC) CPU core, we achieve up to 60\% higher energy efficiency compared with 2-D baseline and 14\% increase in operating frequency compared with standard memory-on-logic 3-D partitioning scheme.