Toward Understanding Stability of RF MIS-HEMTs under ON/SEMI-ON/OFF-State Pulses with Scaling in-situ SiN Thicknesses

Toward Understanding Stability of RF MIS-HEMTs under ON/SEMI-ON/OFF-State Pulses with Scaling in-situ SiN Thicknesses ■

Yi Yang, Hao Yu, Meng-Che Tsai, Wei-Tung Lin, Ying-Chun Kuo, Barry O Sullivan, Aarti Rathi, Amratansh Gupta, Sachin Yadav, Alireza Alian, Uthayasankaran Peralagu, Bertrand Parvais, Nadine Collaert, Tian-Li Wu

Abstract ■

This study examines the stability of RF MISHEMTs under ON, SEMI-ON, and OFF-state pulses with insitu SiN thicknesses scaled from 10nm to 1nm, compared to RF Schottky HEMTs. While stability is maintained under ON state pulses, significant degradation is observed under SEMION and OFF-state pulses, particularly in devices with a 1 nm in-situ SiN layer (M1). The high interface trap density (Nit) and inadequate passivation of the M1 sample contribute to the observed current degradation. EDX analysis suggests a rough interface in M1, likely due to non-uniform SiN growth or SiN/Al2O3 intermixing.