Characterization of analogue Monolithic Active Pixel Sensor test structures implemented in a 65 nm CMOS imaging process ■
Gianluca Aglieri Rinella, Gianluca Aglieri Rinella, Giacomo Alocco, Giacomo Alocco, Matias Antonelli, Matias Antonelli, Roberto Baccomi, Roberto Baccomi, Stefania Maria Beole, Stefania Maria Beole, Mihail Bogdan Blidaru, Mihail Bogdan Blidaru, Bent Benedikt Buttwill, Bent Benedikt Buttwill, Eric Buschmann, Eric Buschmann, Paolo Camerini, Paolo Camerini, Francesca Carnesecchi, Francesca Carnesecchi, Marielle Chartier, Marielle Chartier, Yongjun Choi, Yongjun Choi, Manuel Colocci, Manuel Colocci, Giacomo Contin, Giacomo Contin, Dominik Dannheim, Dominik Dannheim, Daniele De Gruttola, Daniele De Gruttola, Manuel Del Rio Viera, Manuel Del Rio Viera, Andrea Dubla, Andrea Dubla, Antonello di Mauro, Antonello di Mauro, Maurice Calvin Donner, Maurice Calvin Donner, Gregor Hieronymus Eberwein, Gregor Hieronymus Eberwein, Jan Egger, Jan Egger, Laura Fabbietti, Laura Fabbietti, Finn Feindt, Finn Feindt, Kunal Gautam, Kunal Gautam, Roman Gernhaeuser, Roman Gernhaeuser, James Julian Glover, James Julian Glover, Laura Gonella, Laura Gonella, Karl Gran Grodaas, Karl Gran Grodaas, Ingrid Maria Gregor, Ingrid Maria Gregor, Hartmut Hillemanns, Hartmut Hillemanns, Lennart Huth, Lennart Huth, Armin Ilg, Armin Ilg, Artem Isakov, Artem Isakov, Daniel Matthew Jones, Daniel Matthew Jones, Antoine Junique, Antoine Junique, Jetnipit Kaewjai, Jetnipit Kaewjai, Markus Keil, Markus Keil, Jiyoung Kim, Jiyoung Kim, Alex Kluge, Alex Kluge, Chinorat Kobdaj, Chinorat Kobdaj, Artem Kotliarov, Artem Kotliarov, Kritsada Kittimanapun, Kritsada Kittimanapun, Filip KřÞek, Filip KřÞek, Gabriela Kucharska, Gabriela Kucharska, Svetlana Kushpil, Svetlana Kushpil, Paola La Rocca, Paola La Rocca, Natthawut Laojamnongwong, Natthawut Laojamnongwong, Lukas Lautner, Lukas Lautner, Roy Crawford Lemmon, Roy Crawford Lemmon, Corentin Lemoine, Corentin Lemoine, Long Li, Long Li, Francesco Librizzi, Francesco Librizzi, Jian Liu, Jian Liu, Anna Macchiolo, Anna Macchiolo, Magnus Mager, Magnus Mager, Davide Marras, Davide Marras, Paolo Martinengo, Paolo Martinengo, Silvia Masciocchi, Silvia Masciocchi, Serena Mattiazzo, Serena Mattiazzo, Marius Wilm Menzel, Marius Wilm Menzel, Alice Mulliri, Alice Mulliri, Alexander Musta, Alexander Musta, Mia Rose Mylne, Mia Rose Mylne, Francesco Piro, Francesco Piro, Alexandre Rachevski, Alexandre Rachevski, Marika Rasà , Marika Rasà , Karoliina Rebane, Karoliina Rebane, Felix Reidt, Felix Reidt, Riccardo Ricci, Riccardo Ricci, Sara Ruiz Daza, Sara Ruiz Daza, Gaspare Saccà , Gaspare Saccà , Isabella Sanna, Isabella Sanna, Valerio Sarritzu, Valerio Sarritzu, Judith Schlaadt, Judith Schlaadt, David Schledewitz, David Schledewitz, Gilda Scioli, Gilda Scioli, Serhiy Senyukov, Serhiy Senyukov, Adriana Simancas, Adriana Simancas, Walter Snoeys, Walter Snoeys, Simon Spannagel, Simon Spannagel, Miljenko Å uljić, Miljenko Å uljić, Alessandro Sturniolo, Alessandro Sturniolo, Nicolas Tiltmann, Nicolas Tiltmann, Antonio Trifirò, Antonio Trifirò, Gianluca Usai, Gianluca Usai, Tomas Vanat, Tomas Vanat, Jacob Bastiaan Van Beelen, Jacob Bastiaan Van Beelen, Laszlo Varga, Laszlo Varga, Michele Verdoglia, Michele Verdoglia, Gianpiero Vignola, Gianpiero Vignola, Anna Villani, Anna Villani, Haakan Wennloef, Haakan Wennloef, Jonathan Witte, Jonathan Witte, Rebekka Bettina Wittwer, Rebekka Bettina Wittwer
Analogue test structures were fabricated using the Tower Partners Semiconductor Co. CMOS 65 nm ISC process. The purpose was to characterize and qualify this process and to optimize the sensor for the next generation of Monolithic Active Pixels Sensors for high-energy physics. The technology was explored in several variants which differed by: doping levels, pixel geometries and pixel pitches (10–25 μm). These variants have been tested following exposure to varying levels of irradiation up to 3 MGy and 1016 1 MeV neq cm−2. Here the results from prototypes that feature direct analogue output of a 4 × 4 pixel matrix are reported, allowing the systematic and detailed study of charge collection properties. Measurements were taken both using 55Fe X-ray sources and in beam tests using minimum ionizing particles. The results not only demonstrate the feasibility of using this technology for particle detection but also serve as a reference for future applications and optimizations.