Back Barrier Trapping Induced Resistance Dispersion in GaN HEMT: Mechanism, Modeling, and Solutions

Back Barrier Trapping Induced Resistance Dispersion in GaN HEMT: Mechanism, Modeling, and Solutions ■

Hao Yu, Hao Yu, Hao Yu, Bertrand Parvais, Bertrand Parvais, Bertrand Parvais, U. Peralagu, U. Peralagu, U. Peralagu, Rana Yasser ElKashlan, Rana Yasser ElKashlan, Rana Yasser ElKashlan, R. Rodriguez, R. Rodriguez, R. Rodriguez, A. Khaled, A. Khaled, A. Khaled, S. Yadav, S. Yadav, S. Yadav, A. Alian, A. Alian, A. Alian, M. Zhao, M. Zhao, M. Zhao, N. De Almeida Braga, N. De Almeida Braga, N. De Almeida Braga, J. Cobb, J. Cobb, J. Cobb, J. Fang, J. Fang, J. Fang, P. Cardinael, P. Cardinael, P. Cardinael, A. Sibaja-Hernandez, A. Sibaja-Hernandez, A. Sibaja-Hernandez, Nadine Collaert, Nadine Collaert, Nadine Collaert

Abstract ■

Trapping in an impurity (e.g. Fe, C) doped back barrier (BB) causes pronounced on-resistance (Ron) dispersion of GaN HEMTs. We demonstrate that the BB trapping is alleviated by increasing 2DEG density Nsh in the GaN channel (50\% increased Nsh results in 30\% less Delta mathrm\{R\} -\{on\}) and inserting an additional intrinsic AlGaN BB (100 nm AlGaN with 50\% less Delta mathrm\{R\} -\{on\}). We propose a novel flat-AlGaN-BB-energy-band designing criterion for the AlGaN/C-GaN BB combination.