Low-Frequency noise investigation of AlGaN/GaN high-electron-mobility transistors

Low-Frequency noise investigation of AlGaN/GaN high-electron-mobility transistors ■

Maria Glória Caño de Andrade, Maria Glória Caño de Andrade, Luis Felipe de Oliveira Bergamim, Luis Felipe de Oliveira Bergamim, Braz Baptista Júnior, Braz Baptista Júnior, Carlos Roberto Nogueira, Carlos Roberto Nogueira, Fábio Alex da Silva, Fábio Alex da Silva, Kenichiro Takakura, Kenichiro Takakura, Bertrand Parvais, Bertrand Parvais, Eddy Simoen, Eddy Simoen

Abstract ■

In this paper, the noise Power Spectral Density (PSD) of AlGaN/GaN High-Electron-Mobility Transistors (HEMTs) has been experimentally investigated in linear operation (VD = 50 mV) for different channel lengths (L) and widths (W) at different temperatures (5.32 °C till 100 °C). The origin of the noise will be analyzed to understand the physical mechanisms involved. It is shown that the Low-Frequency (LF) noise is dominated by 1/f noise, originating from number fluctuations. Additionally, in shorter devices, a higher 1/f noise PSD is found. The LF noise characteristics indicate that the AlGaN/GaN HEMTs on silicon substrates can be a promising candidate for analog and Radio Frequency applications (RF).