Transistor modelling for mm-Wave technology pathfinding ■
Bertrand Parvais,
Bertrand Parvais,
Bertrand Parvais, R. Elkashlan, R. Elkashlan, R. Elkashlan, H. Yu, H. Yu, H. Yu, A. Sibaja-Hernandez, A. Sibaja-Hernandez, A. Sibaja-Hernandez, B. Vermeersch, B. Vermeersch, B. Vermeersch, V. Putcha, V. Putcha, V. Putcha, P. Cardinael, P. Cardinael, P. Cardinael, R. Rodriguez, R. Rodriguez, R. Rodriguez, A. Khaled, A. Khaled, A. Khaled, A. Alian, A. Alian, A. Alian, Uthayasankaran Peralagu, Uthayasankaran Peralagu, Uthayasankaran Peralagu, M. Zhao, M. Zhao, M. Zhao, S. Yadav, S. Yadav, S. Yadav, G. Gramegna, G. Gramegna, G. Gramegna, J. Van Driessche, J. Van Driessche, J. Van Driessche,
Nadine Collaert,
Nadine Collaert,
Nadine Collaert
A review of the modelling requirements to establish a Design-Technology Co-Optimization loop for mmWave Front-End Modules is presented. The example of GaN/Si technology is detailed, and recent modeling developments are explained