Understanding the memory window in 1T-FeFET memories: A depolarization field perspective ■
K. Kaczmarek, K Kaczmarek, K Kaczmarek, K. Kaczmarek, K Kaczmarek, K. Kaczmarek, Marie Garcia Bardon, M. Garcia Bardon, Marie Garcia Bardon, Marie Garcia Bardon, M. Garcia Bardon, M. Garcia Bardon, Yang Xiang, Y. Xiang, Yang Xiang, Yang Xiang, Y. Xiang, Y. Xiang, Laurent Breuil, L. Breuil, Laurent Breuil, Laurent Breuil, L. Breuil, L. Breuil, Nicolo Ronchi, Nicolo Ronchi, N. Ronchi, N. Ronchi, Nicolo Ronchi, N. Ronchi,
Bertrand Parvais,
Bertrand Parvais,
Bertrand Parvais,
Bertrand Parvais,
Bertrand Parvais,
Bertrand Parvais, G. Groeseneken, G. Groeseneken, Guido Groeseneken, Guido Groeseneken, G. Groeseneken, Guido Groeseneken, J. Van Houdt, J. Van Houdt, Jan Van Houdt, J. Van Houdt, Jan Van Houdt, Jan Van Houdt
We present a physics-based prediction of the progressive VTH shift on fabricated Si:HfO2-FeFETs during Incremental Step Pulse Programming, with the help of our in-house, hardware-validated FeFET compact model. Our study confirms that the depolarization field across the FE layer strongly constrains the retained polarization in the gate stack after the programming waveform stops, which constitutes a fundamental, self-limiting effect on the attainable memory window in multidomain FeFETs. An extensive sensitivity study based on the model suggests that for a 9.5 nm-thick FE layer, decreasing the mean negative coercive field from -1.0 MV/cm to -1.5 MV/cm improves the MW from 0.75 V to 1.07 V, thus effectively alleviating detrimental impact of the depolarization field.