An integrated 132-147GHz power source with +27dBm EIRP

An integrated 132-147GHz power source with +27dBm EIRP ■

Akshay Visweswaran, Akshay Visweswaran, Alexander Haag, Alexander Haag, Carmine de Martino, Carmine de Martino, Karina Schneider, Karina Schneider, Tim Maiwald, Tim Maiwald, Bastien Vignon, Bastien Vignon, Klaus Aufinger, Klaus Aufinger, Marco Spirito, Marco Spirito, Thomas Zwick, Thomas Zwick, Piet Wambacq, Piet Wambacq

Abstract ■

We present a 132-147GHz power source based on four power amplifiers whose outputs are combined into a compact (0.52x0.48mm2 footprint) dielectric resonator antenna mounted on the chip face. The source, prototyped in 0.13μm SiGe BiCMOS, demonstrates an EIRP of 27dBm with a power-added efficiency of 13.8 \%. Individual PAs deliver a peak Psat of 15dBm over a 3-dB bandwidth of 116-152GHz. Excited by shorted patches on chip, the maximum efficiency of the hybrid antenna is 80\% over a 16\% relative bandwidth. The EIRP and transmitted RF power are the highest reported for D-band silicon-based transmitters.