A 247 and 272 GHz Two-Stage Regenerative Amplifiers in 65 nm CMOS with 18 and 15 dB Gain Based on Double-G(max) Gain Boosting Technique

A 247 and 272 GHz Two-Stage Regenerative Amplifiers in 65 nm CMOS with 18 and 15 dB Gain Based on Double-G(max) Gain Boosting Technique ■

Dae-Woong Park, Dzuhri Radityo Utomo, Jong-Phil Hong, Kristof Vaesen, Piet Wambacq, Sang-Gug Lee