Contactless monitoring of Si substrate permittivity and resistivity from microwave to millimeter wave frequencies ■
Amna Elhawil, Amna Elhawil, Amna Elhawil, C.r. Neve, C.r. Neve, C.r. Neve, Benoit Olbrechts, Benoit Olbrechts, Benoit Olbrechts, Isabelle Huynen, Isabelle Huynen, Isabelle Huynen, Jean-Pierre Raskin, Jean-Pierre Raskin, Jean-Pierre Raskin, Gert Poesen, Gert Poesen, Gert Poesen,
Johan Stiens,
Johan Stiens,
Johan Stiens,
Roger Vounckx,
Roger Vounckx,
Roger VounckxA contactless and nondestructive technique is employed for characterizing single-sided metallised silicon wafers. The reflection spectra are measured using a quasi-optical millmeter-wave setup in the frequency range 40-320 GHz. The results are compared with those provided by the coplanar waveguide method, in terms of accuracy and range of applicability.