Purely analytical extraction of an improved nonlinear FinFET model including non-quasi-static effects ■
Giovanni Crupi, Giovanni Crupi, Giovanni Crupi, Dominique M.M.P. Schreurs, Dominique M.M.P. Schreurs, Dominique M.M.P. Schreurs, Alina Caddemi, Alina Caddemi, Alina Caddemi, Iltcho Angelov, Iltcho Angelov, Iltcho Angelov, Majid Homayouni, Majid Homayouni, Majid Homayouni, Antonio Raffo, Antonio Raffo, Antonio Raffo, Giorgio Vannini, Giorgio Vannini, Giorgio Vannini,
Bertrand Parvais,
Bertrand Parvais,
Bertrand ParvaisAn analytical procedure is proposed for extracting a new nonlinear FinFET model, which accounts for non-quasi static effects. The accuracy and the robustness of the obtained nonlinear model are completely validated through the comparison between simulated and measured device behaviour in both linear and nonlinear cases. This study clearly shows that the inclusion of the non-quasi-static phenomena leads to significant model simulation improvements, which become more pronounced at higher frequency.