A Compact Wideband Front-End Using a Single-Inductor Dual-Band VCO in 90 nm Digital CMOS
 
A Compact Wideband Front-End Using a Single-Inductor Dual-Band VCO in 90 nm Digital CMOS 
 
Jonathan Borremans, Andrea Bevilacqua, Stephane Bronckers, M. Dehan, Maarten Kuijk, Piet Wambacq, J. Craninckx
 
Abstract 

As CMOS scales down and grows more expensive, area-aware RF front-end design becomes appropriate. A wideband front-end is presented that uses an inductorless LNA and downconversion section up to 6 GHz. Frequency synthesis is realized using a single-inductor dual-band 3.5 and -10 GHz VCO. In-depth analysis describes the operation of the 4-port oscillator, and compares phase noise to that of a classical VCO. The front-end is realized in 90 run digital CMOS. The LNA achieves a noise figure of 2.7 dB with an average IIP3 of -2 dBm. The dual-band VCO achieves a phase noise of -122 dBc/Hz and -128 dBc/Hz at 3.9 GHz and 10 GHz, respectively, at 2.5 MHz offset. Both circuits are embedded in a wideband direct-conversion front-end consuming less than 60 mW from a 1.2 V supply