High-frequency noise performance of 60-nm gate-length FinFETs

High-frequency noise performance of 60-nm gate-length FinFETs ■

Jean Pierre Raskin, Guillaume Pailloncy, Dimitri Lederer, François Danneville, Gilles Dambrine, Stefaan Decoutere, Abdelkarim Mercha, Bertrand Parvais

Abstract ■

In this paper, the first-ever published investigation on radio-frequency (RF) noise performance of FinFETs is reported. The impact of the geometrical dimensions of FinFETs on RF noise parameters such as the channel length, the fin width, as well as the fin number is analyzed. A minimum noise figure of 1.35 dB is obtained with an associated available gain of 13.5 dB at 10 GHz for Vdd = 0.5 V. This result is quite encouraging to bring solutions for future low-power RF systems.