Perspectives of (sub-) 32nm CMOS for analog/RF and mm-wave applications

Perspectives of (sub-) 32nm CMOS for analog/RF and mm-wave applications ■

M. Dehan, Bertrand Parvais, A. Mercha, V. Subramanian, G. Groeseneken

Abstract ■

New process modules and device architectures for (sub-) 32nm CMOS lead to both opportunities and challenges analog/RF and mm-wave circuit design. A survey will be given describing the advanced process modules and competing architectures in the 1-10 GHz range, while planar bulk CMOS outperforms the FinFETs for sub-circuits above 10 GHz.