A Bondpad-Size Narrowband LNA for Digital CMOS
 
A Bondpad-Size Narrowband LNA for Digital CMOS ■
 
Jonathan Borremans, Jonathan Borremans, Jonathan Borremans, Piet Wambacq, Piet Wambacq, Piet Wambacq, G. Van Der Plas, G. Van Der Plas, G. Van Der Plas, Yves Rolain, Yves Rolain, Yves Rolain, Maarten Kuijk, Maarten Kuijk, Maarten Kuijk
 
Abstract ■

Abstract - The need for a high level of integration in wireless and multi-standard radios, as well as the expensive area in downscaled CMOS pushes towards low-area circuit solutions. Feedback-type inductorless LNAs are such an example. This paper demonstrates a bondpad-size feedback type narrowband LNA using only one stacked inductor. The gain is 20.8 dB at 3.4 GHz with a noise figure of 2.2 dB. This solution is many times smaller than a classical LNA configuration with several inductors, while obtaining similar performance. It is thus an appealing solution for low-area radio integration in digital CMOS. Index Terms - CMOS, low area, Low-noise amplifier (LNA), narrowband, shunt-shunt feedback, stacked inductor.