The structure of the complementary FET (CFET) with NMOS stacked on top of PMOS, inherently yields standard cells and SRAM cells with 25% smaller layout area, 25% higher pin density and 2x higher routing flexibility than FinFET with same overall active footprint. Moreover, our work, based on advanced modelling, demonstrates that 4 track CFET can match and even outperform 5 track FinFET; without the need to lower S/D contact resistivity down to 5e-10Ωcm2 or to elevate the channel stress up to 2GPa. All gains in power-performance-area at circuit-level are maintained at block-level, making 4 track CFET a suitable candidate for N3 N2 technologies. Keywords: CFET, scaling, S/D engineering, Pi-gate.