Suitability of FinFET technology for low-power mixed-signal applications

Suitability of FinFET technology for low-power mixed-signal applications ■

Bertrand Parvais, Bertrand Parvais, Bertrand Parvais, C. Gustin, C. Gustin, C. Gustin, V. De Heyn, V. De Heyn, V. De Heyn, J. Loo, J. Loo, J. Loo, M. Dehan, M. Dehan, M. Dehan, V. Subramanian, V. Subramanian, V. Subramanian, A. Mercha, A. Mercha, A. Mercha, Nadine Collaert, Nadine Collaert, Nadine Collaert, R. Rooyackers, R. Rooyackers, R. Rooyackers, M. Jurczak, M. Jurczak, M. Jurczak, Piet Wambacq, Piet Wambacq, Piet Wambacq, S. Decoutere, S. Decoutere, S. Decoutere

Abstract ■

Wireless applications require a low power technology that enables digital/analog/RF functions on the same chip. FinFET technology presents a competitive alternative to planar CMOS as it features good digital, analog and low-frequency noise performances. Also, very good matching performance is presented here for the first time. Moreover, FinFETs are shown to be attractive for low-power applications below 10 GHz. The suitability of Fin varactors is evaluated and tradeoffs are given. An inductorless oscillator with large tuning range (1-8.5 GHz) for low-power wideband applications is demonstrated for the first time.