Direct X-ray and electron-beam lithography of halogenated zeolitic imidazolate frameworks ■
Min Tu, Min Tu, Min Tu, Benzheng Xia, Benzheng Xia, Benzheng Xia, Dmitry E. Kravchenko, Dmitry E. Kravchenko, Dmitry E. Kravchenko, Max Lutz Tietze, Max Lutz Tietze, Max Lutz Tietze, Alexander John Cruz, Alexander John Cruz, Alexander John Cruz, Ivo Stassen, Ivo Stassen, Ivo Stassen, Tom Hauffman, Tom Hauffman, Tom Hauffman, Joan Teyssandier, Joan Teyssandier, Joan Teyssandier, Steven De Feyter, Steven De Feyter, Steven De Feyter, Zheng Wang, Zheng Wang, Zheng Wang, Roland A. Fischer, Roland A. Fischer, Roland A. Fischer, Benedetta Marmiroli, Benedetta Marmiroli, Benedetta Marmiroli, Heinz Amenitsch, Heinz Amenitsch, Heinz Amenitsch, Ana Torvisco, Ana Torvisco, Ana Torvisco, Miriam de J. Velásquez-Hernández, Miriam de J. Velásquez-Hernández, Miriam de J. Velásquez-Hernández, Paolo Falcaro, Paolo Falcaro, Paolo Falcaro, Rob Ameloot, Rob Ameloot, Rob Ameloot
Metal–organic frameworks (MOFs) offer disruptive potential in micro- and optoelectronics because of the unique properties of these microporous materials. Nanoscale patterning is a fundamental step in the implementation of MOFs in miniaturized solid-state devices. Conventional MOF patterning methods suffer from low resolution and poorly defined pattern edges. Here, we demonstrate the resist-free, direct X-ray and electron-beam lithography of MOFs. This process avoids etching damage and contamination and leaves the porosity and crystallinity of the patterned MOFs intact. The resulting high-quality patterns have excellent sub-50-nm resolution, and approach the mesopore regime. The compatibility of X-ray and electron-beam lithography with existing micro- and nanofabrication processes will facilitate the integration of MOFs in miniaturized devices.