GaN-on-Si mm-wave RF devices integrated in a 200mm CMOS Compatible 3-Level Cu BEOL ■
Bertrand Parvais,
Bertrand Parvais,
Bertrand Parvais, A. Alian, A. Alian, A. Alian, Uthayasankaran Peralagu, Uthayasankaran Peralagu, Uthayasankaran Peralagu, Raul Rodriguez, Raul Rodriguez, Raul Rodriguez, Sachin Yadav, Sachin Yadav, Sachin Yadav, A. Khaled, A. Khaled, A. Khaled, Rana Yasser ElKashlan, Rana Yasser ElKashlan, Rana Yasser ElKashlan, V. Putcha, V. Putcha, V. Putcha, A. Sibaja-Hernandez, A. Sibaja-Hernandez, A. Sibaja-Hernandez, M. Zhao, M. Zhao, M. Zhao,
Piet Wambacq,
Piet Wambacq,
Piet Wambacq,
Nadine Collaert,
Nadine Collaert,
Nadine Collaert, N. Waldron, N. Waldron, N. Waldron
We report on the development of mm-wave GaN-on-Si AlGaN HEMTs integrated with a 3 level Cu damascene BEOL flow on 200mm Si <111> wafers. Optimizations of the gate metal stack, contact resistance and gate length scaling to 110nm result in devices with a peak gm of 430 mS/mm and an fMAX of 135 GHz. While wafer warp was found to increase slightly through the processing of 3 levels of 1μm thick Cu metal, no significant deterioration was observed between devices measured at Metal 1 and Metal 3.