Materials and Defect Aspects of III-V and III-N Devices for High-Speed Analog/RF Applications
 
Materials and Defect Aspects of III-V and III-N Devices for High-Speed Analog/RF Applications ■
 
Eddy Simoen, Eddy Simoen, Po Chun Brent Hsu, Po Chun Brent Hsu, Hao Yu, Hao Yu, Hongyue Wang, Hongyue Wang, Ming Zhao, Ming Zhao, Kenichiro Takakura, Kenichiro Takakura, Vamsi Putcha, Vamsi Putcha, Uthayasankaran Peralagu, Uthayasankaran Peralagu, Bertrand Parvais, Bertrand Parvais, Niamh Waldron, Niamh Waldron, Nadine Collaert, Nadine Collaert
 
Abstract ■

This paper describes the application of Deep Level Transient Spectroscopy and Generation-Recombination Noise Spectroscopy to the study of trap levels in III-V and III-N materials and devices.