CMOS-compatible GaN-based devices on 200mm-Si for RF applications: Integration and Performance

CMOS-compatible GaN-based devices on 200mm-Si for RF applications: Integration and Performance ■

U. Peralagu, B. De Jaeger, D. M. Fleetwood, Piet Wambacq, M. Zhao, Bertrand Parvais, N. Waldron, Nadine Collaert, A. Alian, V. Putcha, A. Khaled, R. Rodriguez, A. Sibaja-Hernandez, S. Chang, E. Simoen, S. E. Zhao

Abstract ■

We report on Al(Ga,In)N HEMTs, MISHEMTs and MOSFETs integrated on 200 mm Si wafers using Au-free processing in standard Si CMOS tools, and discuss the performance tradeoffs, limitations and solutions. The main highlights of process optimization include low RF transmission loss (0.15 dB/mm at 20 GHz), state-of-the-art contact resistance (RC) of 0.14 Ω mm for a non-Au, low thermal budget (<600 °C) contact scheme and a high vertical breakdown voltage (VBD) of >300 V (pre and post device processing). We show that MISHEMTs, which feature the highest field effect mobility (μFE), >2000 cm2/V.s, and the best 1/f noise performance, have the potential to outperform the other device types in terms of device scalability for high frequency operation.