First demonstration of III-V HBTs on 300 mm Si substrates using nano-ridge engineering ■
A. Vais, A. Vais, A. Vais, R. Alcotte, R. Alcotte, R. Alcotte, M. Ingels, M. Ingels, M. Ingels,
Piet Wambacq,
Piet Wambacq,
Piet Wambacq,
Bertrand Parvais,
Bertrand Parvais,
Bertrand Parvais, R. Langer, R. Langer, R. Langer, B. Kunert, B. Kunert, B. Kunert, N. Waldron, N. Waldron, N. Waldron,
Nadine Collaert,
Nadine Collaert,
Nadine Collaert, L. Witters, L. Witters, L. Witters, Y. Mols, Y. Mols, Y. Mols, A. S. Hernandez, A. S. Hernandez, A. S. Hernandez, A. Walke, A. Walke, A. Walke, H. Yu, H. Yu, H. Yu, M. Baryshnikova, M. Baryshnikova, M. Baryshnikova, G. Mannaert, G. Mannaert, G. Mannaert, V. Deshpande, V. Deshpande, V. Deshpande
In this paper, we demonstrate GaAs/InGaP HBTs grown on a 300 mm Si substrate. A DC current gain of \textasciitilde{}112 and breakdown voltage, BVCBO, of 10 V is achieved. The emitter-base and base-collector diodes show an ideality factor of \textasciitilde{}1.2 and \textasciitilde{}1.4, respectively. This demonstration shows the potential for enabling a hybrid III-V CMOS/ technology for 5G and mm-wave applications, not limited to GaAs but which can also be extended to InGaAs on a 300 mm Si substrate.