Si/SiGe superlattice I/O finFETs in a vertically-stacked Gate-All-Around horizontal nanowire technology

Si/SiGe superlattice I/O finFETs in a vertically-stacked Gate-All-Around horizontal nanowire technology ■

G. Hellings, H. Mertens, A. Subirats, E. Simoen, T. Schram, L. A. Ragnarsson, M. Simicic, S. H. Chen, Bertrand Parvais, D. Boudier, B. Cretu, J. Machillot, V. Pena, S. Sun, N. Yoshida, N. Kim, A. Mocuta, D. Linten, N. Horiguchi

Abstract ■

This work presents Si/SiGe superlattice finFETs (FF) for 1.8V/2.5V I/O applications in vertically-stacked Gate-All-Around horizontal nanowire technology (hNW) technology. Superlattice FF have a higher ION than I/O hNW reference devices and can be more easily integrated into a GAA hNW technology than Si I/O FF. These novel I/O FET structures exhibit competitive analog performance and are superior as ESD protection devices.