Characterization and modeling of n-channel bulk FinFETs from DC to high frequency
 
Characterization and modeling of n-channel bulk FinFETs from DC to high frequency ■
 
Ramendra Singh, Ramendra Singh, Ramendra Singh, Pragya Kushwaha, Pragya Kushwaha, Pragya Kushwaha, Sudip Ghosh, Sudip Ghosh, Sudip Ghosh, Bertrand Parvais, Bertrand Parvais, Bertrand Parvais, Yogesh S. Chauhan, Yogesh S. Chauhan, Yogesh S. Chauhan, Abhisek Dixit, Abhisek Dixit, Abhisek Dixit
 
Abstract ■

RF CMOS technology provides a platform for the production of analog, digital and RF circuits on a single chip for futuristic high-level integration. This facilitates the need for a robust compact model for RF FinFETs to study the circuits in a precise and convenient way. In this paper, we have characterized 14-nm N-channel bulk FinFETs by performing two-port S-parameter measurements. Further, BSIM-CMG model for common multiple gate devices is used to accurately capture the RF behavior of the device.