In the race to deliver ever smaller and faster devices, bulk FinFETs are seen as a viable alternative to planar bulk technologies. With that in mind, a new benchmarking scheme is implemented in order to effectively and fairly compare, in simulation, a 10nm FinFET technology with a 28nm planar CMOS one on a 100 MHz gain-bandwidth operational amplifier. For identical phase margins, the 10nm design consumes 99 mu A compared to over 123 mu A in 28nm, yielding a substantial decrease in power consumption in favor of the FinFET-based design.