Fully depleted SOI CMOS technology for heterogeneous micropower, high-temperature or RF microsystems
 
Fully depleted SOI CMOS technology for heterogeneous micropower, high-temperature or RF microsystems ■
 
D. Flandre, D. Flandre, D. Flandre, S. Adriaensen, S. Adriaensen, S. Adriaensen, A. Akheyar, A. Akheyar, A. Akheyar, A. Crahay, A. Crahay, A. Crahay, L. Deme没s, L. Deme没s, L. Deme没s, P. Delatte, P. Delatte, P. Delatte, V. Dessard, V. Dessard, V. Dessard, B. Iniguez, B. Iniguez, B. Iniguez, A. N猫ve, A. N猫ve, A. N猫ve, B. Katschmarskyj, B. Katschmarskyj, B. Katschmarskyj, P. Loumaye, P. Loumaye, P. Loumaye, J. Laconte, J. Laconte, J. Laconte, I. Martinez, I. Martinez, I. Martinez, G. Picun, G. Picun, G. Picun, E. Rauly, E. Rauly, E. Rauly, C. Renaux, C. Renaux, C. Renaux, D. Sp么te, D. Sp么te, D. Sp么te, M. Zitout, M. Zitout, M. Zitout, M. Dehan, M. Dehan, M. Dehan, Bertrand Parvais, Bertrand Parvais, Bertrand Parvais, P. Simon, P. Simon, P. Simon, D. Vanhoenacker, D. Vanhoenacker, D. Vanhoenacker, J. P. Raskin, J. P. Raskin, J. P. Raskin
 
Abstract ■

Based on an extensive review of research results on the material, process, device and circuit properties of thin-film fully depleted SOI CMOS, our work demonstrates that such a process with channel lengths of about 1 渭m may emerge as a most promising and mature contender for integrated microsystems which must operate under low-voltage low-power conditions, at microwave frequencies and/or in the temperature range 200-350掳C.