High-efficiency thin-film light-emitting diodes at 650 nm ■
Cathleen Rooman, Cathleen Rooman, Reiner Windisch, Reiner Windisch, M. De Hondt, M. De Hondt, P. Modak, P. Modak, I. Moerman, I. Moerman, P. Mijlemans, P. Mijlemans, Barun Dutta, Barun Dutta, Gustaaf Borghs, Gustaaf Borghs,
Roger Vounckx,
Roger Vounckx,
Maarten Kuijk,
Maarten Kuijk, P. Heremans, P. Heremans
The first surface-textured thin-film GaInP/AlGaInP light-emitting diodes operating at a wavelength of 650 nm are presented, Unencapsulated devices reach an external quantum efficiency of 24\%, which is further increased to 31\% by encapsulation. The optical output power is 4mW at a current of 7mA